This problem considers the thermally driven diffusion of a dopant into a solid from a constant masked source. Parameters have been chosen to be those typically encountered in semiconductor diffusion. The PDE is just the diffusion equation:
dt(C) = div(D*grad(C)) ,
where C is the concentration and D is the diffusivity. At early times, the solution near the source can be compared to the analytic solution for 1D diffusion.
![diffusion-concentration Diffusion Concentration contours](http://pdesolutions.com/wp-content/uploads/2024/06/diffusion-concentration.gif)
Concentration contours at time = 1 hour.
![diffusion-comparison-numerical Diffusion Numerical Comparison Graph](http://pdesolutions.com/wp-content/uploads/2024/06/diffusion-comparison-numerical.gif)
Comparison of numerical and exact solutions (C/C0) along center line.
![diffusion-concentration-graph-points Diffusion Concentration Graph Points](http://pdesolutions.com/wp-content/uploads/2024/06/diffusion-concentration-graph-points.gif)